How does partial pressure of O2 affect thermal oxidation time for Si?

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SUMMARY

The discussion centers on the impact of O2 partial pressure during the thermal oxidation of silicon (Si) wafers for SiO2 formation. The classic Deal and Grove model is referenced as a definitive source, specifically Figure 8, which elucidates the relationship between O2 partial pressure and oxidation time. The inquiry was resolved through the identification of this foundational paper, confirming its relevance in understanding the oxidation process.

PREREQUISITES
  • Understanding of thermal oxidation processes in semiconductor manufacturing
  • Familiarity with silicon wafer fabrication techniques
  • Knowledge of the Deal and Grove model for oxidation kinetics
  • Basic principles of gas partial pressures in chemical reactions
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  • Study the Deal and Grove model in detail, focusing on oxidation kinetics
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  • Explore advanced techniques for measuring partial pressures in oxidation processes
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Semiconductor engineers, materials scientists, and researchers involved in silicon wafer processing and oxidation techniques will benefit from this discussion.

Talker1500
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Hi guys,

I'm trying to use thermal oxidation with Si wafers in order to get SiO2 to use for electric components. I've been trying to find out how the partial pressure of the gases used (O2 in this case, it's a dry oxidation) affect the oxidation time, but I haven't been able to find an answer.

I hope anyone can help me with this little dilema, thanks in advance
 
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You must not have tried very hard, I googled "thermal oxidation of silicon" and the first link was to the classic Deal and Grove paper that describes their model. Here is the link. Figure 8 answers your question.
 
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I've had that paper for some time but for some reason I overlooked the last part when I read it.Thank you very much for the answer, this thread can be closed now.
 

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