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Summary:: It is a small question that my teacher gave me about avalanche diode. Anyone who can help me will be very grateful.
Consider an avalanche photodiode of InGaAs, which operates at the wavelength of 1310 nm, and has a bandwidth of 1GHz. The operating temperature of the device is 300K and its equivalent resistance is 50Ω. The gain coefficient avalanche equals 4 and the noise factor equals 2.
The device has an active region with length 1μm, absorption coefficient of 10^4 cm-1, recombination coefficient 0.9 and refractive index 3.4.
Determine:
(a) The quantum efficiency of the device
(b) The responsiveness of the device
(c) The device's NEP (Noise Equivalent Power)
(d) The flow of photons at the entrance of the device that results in a signal-to-noise ratio equal to 1000
(e) In the previous item, would it be advantageous to cool the detector? Justify.
Summary:: It is a small question that my teacher gave me about avalanche diode. Anyone who can help me will be very grateful.
Consider an avalanche photodiode of InGaAs, which operates at the wavelength of 1310 nm, and has a bandwidth of 1GHz. The operating temperature of the device is 300K and its equivalent resistance is 50Ω. The gain coefficient avalanche equals 4 and the noise factor equals 2.
The device has an active region with length 1μm, absorption coefficient of 10^4 cm-1, recombination coefficient 0.9 and refractive index 3.4.
Determine:
(a) The quantum efficiency of the device
(b) The responsiveness of the device
(c) The device's NEP (Noise Equivalent Power)
(d) The flow of photons at the entrance of the device that results in a signal-to-noise ratio equal to 1000
(e) In the previous item, would it be advantageous to cool the detector? Justify.
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