Plot transistor characteristics Id vs. Vds

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SUMMARY

The discussion focuses on plotting the transistor characteristics of Id versus Vds for a given circuit with specific transistor rules. The equations governing the transistor operation include the conditions for Id based on Vgs and Vds, specifically for the cutoff, triode, and saturation regions. The key parameters involved are V_T (threshold voltage), V_DS,SAT (saturation voltage), and g_m (transconductance). The solution involves plotting Id for Vds ranging from 0 to 5V and Vgs from 1 to 5V in 0.25V increments, resulting in a graph that transitions through different operational regions of the transistor.

PREREQUISITES
  • Understanding of transistor operation principles, including cutoff, triode, and saturation regions.
  • Familiarity with the equations governing MOSFET characteristics, specifically Id = g_m(Vgs - V_T)(Vds/V_DS,SAT).
  • Knowledge of circuit analysis techniques, including Kirchhoff's Current Law (KCL) and Kirchhoff's Voltage Law (KVL).
  • Ability to plot graphs using software tools or graphing techniques for electrical characteristics.
NEXT STEPS
  • Learn how to calculate transconductance (g_m) for different MOSFETs.
  • Explore the impact of varying V_T and V_DS,SAT on transistor behavior.
  • Study the use of simulation tools like LTspice or Multisim for plotting transistor characteristics.
  • Investigate the effects of temperature and process variations on transistor parameters.
USEFUL FOR

Electrical engineering students, circuit designers, and anyone involved in semiconductor device analysis or transistor circuit design will benefit from this discussion.

VinnyCee
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Homework Statement



Assume the circuit pictured below:

http://img259.imageshack.us/img259/3443/problem2bwz3.jpg

The transistor follows these rules:

I_D\,=\,0 if V_{GS}\,\le\,V_T

I_D\,=\,g_m\,\left(V_{GS}\,-\,V_T\right)\,\left(\frac{V_{DS}}{V_{DS, SAT}}\right) if V_{GS}\,\ge\,V_T\, and \,0\,\le\,V_{DS}\,\le\,V_{DS, SAT}

I_D\,=\,g_m\,\left(V_{GS}\,-\,V_T\right) if V_{GS}\,\ge\,V_T\, and \,V_{DS}\,\ge\,V_{DS, SAT}

I_G\,=\,0 at all timesThe question: Plot the transistor characteristics Id vs. Vds for Vds = 0 to 5V and Vgs = 1 to 5V in 0.25V steps.

Homework Equations



KCL, KVL, v = iR, the transistor rules above.

The Attempt at a Solution



I did KCL at node Vd and node Vs.

Vd) \frac{V_{out}\,-\,V_{cc}}{R_2}\,+\,g_m\,\left(V_{GS}\,-\,V_T\right)\,\left(\frac{V_{DS}}{V_{DS, SAT}}\right)\,=\,0

Vs) \frac{V_S}{R_1}\,-\,g_m\,\left(V_{GS}\,-\,V_T\right)\,\left(\frac{V_{DS}}{V_{DS, SAT}}\right)\,=\,0

I don't know how these help me if I solve them for Vout ot Vs or whatever. The problem before this one had the exact same circuit diagram with different transistor rules. The previous problem did not have the last fractional term for the middle region of operation for the transistor. This made a graph that looked like this:

http://img264.imageshack.us/img264/5963/homework5problem1aeg7.jpg

However, I know that the same graph for these new transistor rules is not just straight lines again. Each line in this new graph of Id vs. Vds is supposed to start out at the origin and linearly slope upwards to the straight lines in the graph from the previous problem (above). The problem is that I don't know what to graph or how to go about getting the equations for it. Please help!
 
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the key here is to know what is V_T, V_DS,SAT, g_m do you know what they are? are they given in the question? if you know them, then the equation relating I_D and V_DS are given to u, so somply plot them.
for example, when V_gs is less than threshold V_T, draw a flat/straight line I_D=0, when it enters the triode region, draw that sloped straight line, then after satuation another horizontal line (but not zero) etc.. each value of V_gs will give a slightly different curve.. observe that the slope, and the saturated value changes with V_GS.
 

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