Probability of Quantum Tunneling

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Homework Help Overview

The discussion revolves around the probability of quantum tunneling in a metal-oxide-semiconductor device when a positive voltage is applied. The original poster seeks to calculate the oxide thickness required for 5% of electrons to tunnel through the oxide layer.

Discussion Character

  • Exploratory, Conceptual clarification, Assumption checking

Approaches and Questions Raised

  • The original poster attempts to apply quantum tunneling equations and relates electron energy to thermal energy, but faces confusion regarding the correct interpretation of energy values. Some participants question the appropriateness of the equations used and the assumptions about the potential shape.

Discussion Status

The discussion is ongoing, with participants providing feedback on the original poster's approach. There is a suggestion to refer to more relevant lecture notes or textbooks, and some guidance on the context of tunneling in gate oxide breakdown is offered, though no consensus has been reached on the correct method or interpretation.

Contextual Notes

The original poster lacks relevant resources and is uncertain about the correct values and equations to use in their calculations. There is also mention of practical considerations regarding defects in gate oxides that may affect tunneling outcomes.

Minhty
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Homework Statement


I am given a metal-oxide-semiconductor device. I apply a positive voltage (30 V) on to the metal. Theoretically, the electrons should tunnel through the oxide. I want to calculate the oxide thickness for only 5% of electrons tunneling through the oxide.

Homework Equations



I used the equations from here:
http://hyperphysics.phy-astr.gsu.edu/hbase/quantum/barr.html

where ψ=e-αx
α = √(2m(U-E))/[STRIKE]h[/STRIKE]

Also, I thought the probability of electrons tunneling is:
|ψ|2 = e-2αx

The Attempt at a Solution



So I thought that E is electron energy and E≈kT, but my professor told me that it isn't true and didn't explain to me what it is, so I don't know what the electron energy is anymore.

Also, I thought U is the applied voltage. I made the voltage into energy by the equation: voltage = energy/charge so 30 V become 30eV

I don't know if I'm doing this right or if I'm putting the wrong numbers in the wrong place. Any advice is appreciated! Thanks!
 
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Unfortunately you’re not using the right equations at the moment. The wavefunction you have is for electrons inside the barrier, so you are calculating the electron density a distance x inside the barrier rather than the tunnelling probability. Moreover, the shape of the potential in your problem is different from that website –*can you see why?

Do you have any notes from lectures or your textbook that look more relevant to this situation?
 
I'm sorry but I don't have resources that is relevant to the situation.
 
I can't help with the math/physics other than to say that when measuring gate oxide breakdown characteristics it was always referred to as Fowler-Nordheim tunneling. Real gate oxides would have defects and be worn out by tunneling? so the practical figure for gate oxide thickness is probably higher than the theoretical. I hope that offers some help, part of my motivation for commenting on an area I can rightly profess ignorance in is to see what the answer actually is.
 
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