1. The problem statement, all variables and given/known data I am given a metal-oxide-semiconductor device. I apply a positive voltage (30 V) on to the metal. Theoretically, the electrons should tunnel through the oxide. I want to calculate the oxide thickness for only 5% of electrons tunneling through the oxide. 2. Relevant equations I used the equations from here: http://hyperphysics.phy-astr.gsu.edu/hbase/quantum/barr.html where ψ=e-αx α = √(2m(U-E))/[STRIKE]h[/STRIKE] Also, I thought the probability of electrons tunneling is: |ψ|2 = e-2αx 3. The attempt at a solution So I thought that E is electron energy and E≈kT, but my professor told me that it isn't true and didn't explain to me what it is, so I don't know what the electron energy is anymore. Also, I thought U is the applied voltage. I made the voltage into energy by the equation: voltage = energy/charge so 30 V become 30eV I don't know if I'm doing this right or if I'm putting the wrong numbers in the wrong place. Any advice is appreciated! Thanks!