SUMMARY
The resistivity of intrinsic silicon at room temperature is 2.3 x 103 Ωm, while n-type extrinsic silicon has a resistivity of 8.33 x 10-2 Ωm. A bar of extrinsic silicon measuring 50 x 1000 mm carries a steady current of 100 μA, resulting in a voltage of 50 mV across it. When applying Ohm's Law, the voltage across an equivalent bar of intrinsic silicon can be calculated, although deviations from Ohm's Law may occur in high electric fields, known as the "hot electron" regime. For practical applications, Ohm's Law remains applicable in most scenarios.
PREREQUISITES
- Understanding of Ohm's Law and its application in electrical circuits
- Knowledge of semiconductor physics, particularly intrinsic and extrinsic silicon
- Familiarity with resistivity and its implications in material science
- Basic concepts of current flow in semiconductors
NEXT STEPS
- Research the effects of temperature on semiconductor resistivity
- Learn about the "hot electron" regime and its impact on semiconductor behavior
- Explore advanced semiconductor models beyond Ohm's Law
- Investigate practical applications of intrinsic and extrinsic silicon in electronic devices
USEFUL FOR
Electrical engineers, materials scientists, and students studying semiconductor physics will benefit from this discussion, particularly those focused on the behavior of silicon in electronic applications.