I'm measuring the drift velocity of holes in n-type Germanium using the Shockley-Haynes technique. Two metal point contacts are placed some distance apart on a germanium bar. The collector is negative biased owing to it being connected to a 9V battery. The emitter is connected to a pulse generator and a positive pulse is applied which forward biases the emitter (to emit holes). My question is, are the point contacts Schottky diodes? I'm thinking they are just by virtue of there being a metal-semiconductor interface. How might I go about measuring the voltage current characteristics of the diode, if indeed the point contacts are Schottky diodes? The following report is what has got me thinking about this. Am i automatically setting up a Schottky barrier? http://cantab.jkut.com/Mobility of carriers in semiconductors.pdf ps. i don't believe this constitutes a 'homework' question but if it needs moving then please do.