The discussion centers around identifying books and papers that provide detailed explanations of the "short-channel effect," particularly in the context of semiconductor devices such as MOSFETs. Participants share resources and insights related to the theoretical and practical aspects of this phenomenon.
Participants generally agree on the importance of understanding device scaling in relation to short-channel effects, but there is no consensus on specific resources beyond the mention of Sze and Ng's text. Multiple viewpoints on the topic are presented without resolution.
Some participants express uncertainty about their expertise in the field, indicating that their knowledge is based on limited study and interest rather than specialization.
This discussion may be useful for students and professionals interested in semiconductor physics, particularly those looking to understand the implications of short-channel effects in modern FETs.
xhwubai said:Thank you very much! Any more?
yungman said:Not from me anymore! I study this for very short time. I thought it explained pretty well but what do I know, I am not specialized in this field, I just study it for my interest once few years back.
Look into GaAs FETs and other modern FETs theory, that is where short channel stuff is.
seang said:There is a classic text by Sze and Ng which will give you an overview of these things.
When you want to know about short-channel effects, a good place to start is device scaling.
Let's say, in a MOSFET, you want to scale a device, but keep the same electric field in the gate oxide. Well, to accomplish this, one has to decrease the channel doping, which in turn makes your source and drain depletion lengths longer, which is sort of the root of short channel effects.
In your reading, you will find reasons for wanting to keep the same electric field in the oxide. From there, you can understand why Intel and people are always looking for exotic gate materials, like the presently-used Hafnium oxide.
Good luck!