Si IGBT and SiC MOSFET comparison

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SUMMARY

The discussion clarifies the fundamental differences between Silicon Insulated Gate Bipolar Transistor (Si IGBT) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET). The key distinction lies in their operational principles: the IGBT is a minority carrier device due to its p region connected to the collector, which injects minority charges into the n-region when activated, resulting in lower on-resistance compared to the majority carrier operation of the MOSFET. This structural and functional difference is crucial for applications requiring efficient power management.

PREREQUISITES
  • Understanding of semiconductor device physics
  • Familiarity with IGBT and MOSFET operational principles
  • Knowledge of power electronics applications
  • Basic comprehension of device structures and characteristics
NEXT STEPS
  • Research the operational characteristics of Si IGBT and SiC MOSFET
  • Explore the impact of on-resistance in power electronics applications
  • Learn about the thermal performance of SiC MOSFETs compared to Si IGBTs
  • Investigate the applications of IGBTs and MOSFETs in renewable energy systems
USEFUL FOR

Electrical engineers, power electronics specialists, and students studying semiconductor devices will benefit from this discussion, particularly those focused on optimizing power management solutions.

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Please see below.
I am trying to understand the difference between an Si IGBT and SiC MOSFET. The device structure in question is the following:

https://www.researchgate.net/figure/Comparison-between-Si-IGBT-and-SiC-MOSFET-modules-a-Cross-section-of-Trench-FS-Si-IGBT_fig6_318908365

It's hard to understand why one is a MOSFET and the other is an IGBT. They both look the same, other than the inversion layer looks vertical for the IGBT and the MOSFET is lateral. I'm not sure what I'm missing in understanding how these two devices are fundamentally unique. Any feedback appreciated!
 
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MOSFET and IGBT have a very similar structure, but the most important difference is the p region connected to the IGBT collector. Its function is to inject minority charges into the n- region while IGBT is in the on state. This makes IGBT a minority carrier device while MOSFET is a majority carrier device which results in decreased on-resistance of IGBT
 

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