Single electron transistor at high-temperature

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The discussion focuses on the mathematical derivation of the expression for the single electron transistor (SET) at high temperatures, specifically proving the relationship between Ck and the gamma function. The key equation presented is Ck=[{gamma(1+a)*gamma(1+b)}/{gamma^2(1+k)*gamma(1+u)}]*e^(Scl), derived from manipulating the gamma function definitions. The variable u is defined as u=[g*Beta*Ec]/[2*(pi)^2], indicating its dependence on physical constants. The correction of order 1/N is deemed negligible in this context.

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From Ck=[{e^(-Scl)*gamma(N+1)*gamma(N+1+u)}/{gamma(1+u)}]/[{gamma(N+1+a-k)*gamma(N+1+b-k)}/{gamma(1+a-k)*gamma(1+b-k)}]

How to prove Ck=[e^(-Scl)*{gamma(1+a-k)*gamma(1+b-k)}]/{gamma(1+u)}

to get Ck=[{gamma(1+a)*gamma(1+b)}/{gamma^2(1+k)*gamma(1+u)}]*e^(Scl)?

by u=[g*Beta*Ec]/[2*(pi)^2]

where the correction of order 1/N may be ignored. Employing the definition of the gamma function ; gamma(N+1+a)=(N+a)(N+a-1)...(1+a)a!
 
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zendosqueeze said:
From Ck=[{e^(-Scl)*gamma(N+1)*gamma(N+1+u)}/{gamma(1+u)}]/[{gamma(N+1+a-k)*gamma(N+1+b-k)}/{gamma(1+a-k)*gamma(1+b-k)}]

How to prove Ck=[e^(-Scl)*{gamma(1+a-k)*gamma(1+b-k)}]/{gamma(1+u)}

to get Ck=[{gamma(1+a)*gamma(1+b)}/{gamma^2(1+k)*gamma(1+u)}]*e^(Scl)?

by u=[g*Beta*Ec]/[2*(pi)^2]

where the correction of order 1/N may be ignored. Employing the definition of the gamma function ; gamma(N+1+a)=(N+a)(N+a-1)...(1+a)a!

Your post looks like nonsense or trolling to me. What does the body of your post have to do with the title of your thread? You need to provide a lot more explanatory details to make this thread make sense, IMO.
 

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