The pumping current of the semiconductor lasers

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SUMMARY

The discussion centers on the feasibility of negative pumping currents in semiconductor lasers, specifically Distributed Feedback (DFB) lasers and Fabry-Pérot Laser Diodes (FP-LD). Jason.galq inquires whether the pumping current can be less than zero, particularly during a brief duration of 0.05 nanoseconds. The conversation highlights the modulation of bias current, represented by the equation I_total = I0 + Delta_I * sin(2.0*pi *fm *t), and questions the possibility of Delta_I exceeding three times I0 at a modulation frequency of 20 GHz.

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  • Understanding of semiconductor laser operation principles
  • Familiarity with rate equations in laser modeling
  • Knowledge of modulation techniques in electrical engineering
  • Experience with numerical modeling software for simulations
NEXT STEPS
  • Research the implications of negative pumping currents in semiconductor lasers
  • Explore the mathematical modeling of laser rate equations
  • Investigate modulation techniques for high-frequency applications
  • Learn about the characteristics and applications of DFB and FP-LD lasers
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Electrical engineers, laser physicists, and researchers involved in semiconductor laser technology and modulation techniques will benefit from this discussion.

galq
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Hi all,

I have a question and ask for a discussion. Can the pumping current of the semiconductor lasers such as DFB laser and FP-LD, be smaller than zero?

Best Regards,
Jason.galq
 
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galq said:
Hi all,

I have a question and ask for a discussion. Can the pumping current of the semiconductor lasers such as DFB laser and FP-LD, be smaller than zero?

Best Regards,
Jason.galq

Welcome to the PF.

What do you mean? By less than zero you mean negative? Do you have some reference links you can post to help us understand your question?
 
Thanks for your reply. Yes, I mean negative pumping, but within a very small time (0.05ns). Acturally i am doing some numerical modelling and playing the rate equations. The pumping is a source term in the equation. And if we modulate the bias current, which is I_total = I0 + Delta_I * sin(2.0*pi *fm *t), where I0 is the DC part and Delta_I is the A.C. part, fm is the modulation frequency. If fm is very large (20 GHz), can the Delta_I be 3 times the I0 ? I am not familiar with the experiment at all, thus I post this question here for discussion.
 

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