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I am currently working on the thermal dependence of photoluminescence measurements of Zinc oxide. however, I am investigating numerically. At thermal equilibrium the generation of carriers is equal to the recombination rate, away from thermal equilibrium- away from the respective band edges by kBT, the distribution of carriers is expressed by Boltzmann distribution and this is where quasi-fermi levels enter the picture. I would like to ask for help in understanding quasi-fermi levels and their relationship with temperature.

Also, quasi-Fermi levels are related to the electron and hole densities n and p,is it possible to express n and p as a function of T?

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# Thermal dependence of PL measurements:quasi-fermi levels

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