Understanding the VCE Saturation of BJTs

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SUMMARY

The VCE saturation (VCE(SAT)) of Bipolar Junction Transistors (BJTs) occurs when both the base-emitter and base-collector junctions are forward biased, resulting in a minimal voltage drop across the collector-emitter junction, typically around 0.2V. This phenomenon is explained by the relationship between collector current (Ic) and emitter current (Ie), indicating that charge accumulation in the base contributes to the saturation state. For a deeper understanding, refer to authoritative texts such as "Microelectronic Circuits" by Sedra & Smith or "Analysis and Design of Analog Integrated Circuits" by Gray and Meyer.

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  • Understanding of Bipolar Junction Transistor (BJT) operation
  • Familiarity with semiconductor physics
  • Knowledge of forward biasing in electronic components
  • Basic grasp of current flow in electronic circuits
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  • Study the mathematical derivation of VCE(SAT) in BJTs
  • Explore the impact of temperature on VCE saturation
  • Learn about the differences between BJTs and MOSFETs in saturation
  • Investigate practical applications of BJTs in amplifier circuits
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Electronics students, circuit designers, and engineers seeking to deepen their understanding of BJT operation and saturation characteristics.

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Why is there a VCE sat for BJTs? Where does it come from?
Can someone explain physically?
 
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Just skimming the surface, the BJT is in saturation when both junctions are forward biased. When that happens, the voltage across the collector with respect to the emitter is very small (~0V). In practice VCE(SAT)~= 0.2 V. Refer to any fine electronics textbook (Sedra & Smith, Gray and Meyer, etc) for more information
 
mathematically, when Vce is trying to be a negative voltage it will actually appear as Vce(sat)

don't quote me on it
 

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