Let us consider an npn transistor. The emitter is grounded and the transistor is operating in CE mode. Consider that the region of operation is saturation mode. My teacher asks us to consider that Voltage between collector and emitter is 0.2 V, that is, Vce=0.2 V. I have read a few posts in some websites which say that in saturation region, both base-emitter junction and base collector junction are forward biased. They also say that Vce varies from 0.1 volt to 0.5 V depending on the transistor(My teacher asks us to take 0.2 V, as I mentioned before). My question is; How is it that the collector is at higher potential compared to emitter when both the base-collector junction and base-emitter junction are forward biased( say, Vce is 0.2 V)?