The discussion revolves around the implications of semiconductor intrinsic carrier density, particularly focusing on the threshold of 10^15 cm^-3 and its effects on the utility of semiconductors in applications. Participants explore whether there is a rule of thumb regarding this threshold and the empirical basis for specific intrinsic carrier concentrations in materials like germanium.
Participants do not appear to reach a consensus on the existence of a rule of thumb regarding intrinsic carrier density and its implications. There are competing views on the relevance and application of the 2*10^13 cm^-3 figure.
The discussion includes references to empirical data and theoretical considerations but does not resolve the underlying assumptions or the specific context of the intrinsic carrier density values.
Never heard of such rule. Germanium intrinsic concentration is 2*10^13 cm^-3, and nowadays even this value is considered too high for applications.ZeroFunGame said:Summary: Is there a rule of thumb that once a semiconductor's intrinsic carrier density reaches 10^15 cm^-3, that the semiconductor cannot effectively be used to perform useful operations?
Is there a rule of thumb that once a semiconductor's intrinsic carrier density reaches 10^15 cm^-3, that the semiconductor cannot effectively be used to perform useful operations?
trurle said:Never heard of such rule. Germanium intrinsic concentration is 2*10^13 cm^-3, and nowadays even this value is considered too high for applications.
Empirical.ZeroFunGame said:is the 2*10^13 cm^-3 number empirical? or is there a theoretical proof that could be stepped through to determine this value?
http://www.ioffe.ru/SVA/NSM/Semicond/Ge/bandstr.htmlZeroFunGame said:link?