Why potential of n side is higher in unbiased p-n junction

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SUMMARY

The potential of the n-side of a p-n junction is higher than that of the p-side when no external battery is connected due to the natural diffusion of charge carriers. In the absence of a battery, the n-side accumulates a net positive charge as electrons diffuse to the p-side, which gains a net negative charge. This charge separation creates a potential barrier that prevents further diffusion, establishing a voltage difference across the junction. The typical voltage drop across silicon p-n junctions is approximately 0.7V when forward-biased.

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  • Understanding of p-n junction theory
  • Familiarity with charge carrier dynamics in semiconductors
  • Knowledge of voltage potential and electric fields
  • Basic concepts of diode operation and biasing
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  • Research "PN junction depletion region" to understand charge distribution
  • Study the effects of reverse-bias on diode behavior
  • Learn about the voltage drop characteristics of different semiconductor materials
  • Explore the concept of potential barriers in semiconductor physics
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Rishav sapahi
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why the potential of n side is higher than that of the p side when no battery is connected to the p-n junction?
 
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Well if there is no battery, the circuit is pretty much useless... The p-n junction is typically associated with a voltage drop across the p-n junction (somewhere around .5-3V for LEDs). However with no battery in the circuit, there will be no current flowing and thus no voltage across the junction, so they should be at the same potential.
 
but in my book they are stating that n-side is at higher potential without any explanation
 
Is the battery attached to the n-side? If so, then yes, the n-side would be at a higher potential and the p-side would be a 0V, since there in no (practically none) current flowing through the diode. This is known as the reverse-bias direction. The voltage at the n-side would be at the same voltage as the battery (assuming it is just connected with a wire).
 
Look up "PN junction depletion region". The natural potential that develops spontaneously across a PN junction is due to the diffusion of charge carriers across the junction. P type material has "holes" in its bond structure that can be "filled" by accepting electrons, while the N side has more than enough conduction electrons to satisfy its bond requirements.

However, every electron that crosses over leaves a small net positive charge in the N material, while the P side gains a small negative charge. These charges build up until they suppress further movement --- they raise a potential barrier against further diffusion of charges. This is what leads to the "turn on" bias requirement to get current moving across the junction (about 0.7V for silicon PN junctions).
 
so Is high potential just means that given side is more positively charged than other
 
Rishav sapahi said:
so Is high potential just means that given side is more positively charged than other

Yes. A potential develops across the junction.
 

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