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## Main Question or Discussion Point

Hello guys, I stumbled upon this problem while studying non uniformly distributed pn junctions and finding difficulty solving this. Any help will be greatly appreciated.

A diffused silicon p-n junction has a linearly graded junction on the p side with a = 2 x10^19 cm-4, and a uniform doping of 10^15 cm-3 on the n side. If the depletion width on the p side is 0.7 micro meter at zero bias, ﬁnd the total depletion width, built-in potential, and maximum electric ﬁeld at zero bias.

A diffused silicon p-n junction has a linearly graded junction on the p side with a = 2 x10^19 cm-4, and a uniform doping of 10^15 cm-3 on the n side. If the depletion width on the p side is 0.7 micro meter at zero bias, ﬁnd the total depletion width, built-in potential, and maximum electric ﬁeld at zero bias.