1) really?, then i might look for anther way in which customize a teflon cell/holder so i can mount my silicon die onto the teflon holder with exposed 7x7mm square on the top where i can pour in etching solution, just like the etching cell sailor's lab is using...
i would like to have the opening 7x7mm at the bottom. I have bonded copper pillar beanath the silicon die; i need to etch 7x7mm Si on the top to all the way down to the bottom in order to see the bonded structure.
If i use teflon as a mask, I am planning just ot use teflon tape, which is can...
my die is about 9x9 mm and i am trying to etch a square of 7x7mm on the center of the die, so it is quite large.
I have a question about anistropic etching using such as KOH, the etching rate would dramatically slow once it hit the 111 plane of silicon, resulitng a praymaid like etched...
Thanks for reply, if I use anisotropic KOH, it will etch very slowly once it hits 111 plane, then I won't be able to etch through the 525 um thickness, so I should use corrosive HF/HNO3/Acetic acid method.
I'm wondering if it is possible to use Teflon as a mask to withstand its attack? Such as...
Im trying to etch 525um (100) p-type silicon, and i intend to use HF+HNO3+CH3COOH for high etching rate since i need to etch 525um of Si. does anyone know what ratio should i use to obtain high etching rate?
I am trying to look for a mask that is able to withstand the attack of the etching...