- #1
snabelpablo
- 7
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If we make an NPN transistor and change the base doping level so that we get a higher consentration of holes will β increase or decrease? Why?
I know β=IC/IB. Will more holes in the base make more electrons pass from the emitter to the collector increasing IC and thereby β? Or will IB increase propertionally so that β remains the same? What do you think?
I know β=IC/IB. Will more holes in the base make more electrons pass from the emitter to the collector increasing IC and thereby β? Or will IB increase propertionally so that β remains the same? What do you think?