- #1
meldave00
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During the processing of a PN junction diode when the Ptype material and the Ntype material are joined together. The holes tend to diffuse from the Ptype material to the Ntype material and conversly the electrons from the Ntype material diffuse from the ntype material to the ptype material. This diffusion eventually stops because the minority carriers that diffused over now create an Efield that stops the diffusion of charge and hold them in place. This is called the depletion region of the PN junction diode.
The Efield produces by the minority carriers in turn produces a built in potential called Vbi.
My question?
1). If I put a voltage meter across a PN junction diode. I get 0 V. Why don't I get Vbi?
2). What if somehow I was able to probe at the edges of the depletion region. Would I then be able to measure vbi instead of 0V?
regards,
David
The Efield produces by the minority carriers in turn produces a built in potential called Vbi.
My question?
1). If I put a voltage meter across a PN junction diode. I get 0 V. Why don't I get Vbi?
2). What if somehow I was able to probe at the edges of the depletion region. Would I then be able to measure vbi instead of 0V?
regards,
David