Doping semiconductors compounded from various element groups

In summary, the dopant group affects the resultant doping type, with group V tending to result in p-type dopants, and group VI tending to result in n-type dopants.
  • #1
Matthew Strasiotto
6
2
Hi all - This is pulled from a past paper -

Homework Statement


I'm only going to state the components that I find challenging of this problem - The rest will be attached in my solution set.

Essentially - given an intrinsic semiconductor comprised of group II-VI elements.
Upon doping with group V, what's the resultant type of doping achieved?
My assumption - As will be seen in my uploaded solutions - is that I can approximate an "average" semiconductor group of halfway between 2 and 6, and dope this with group 5.

Additionally - I'd like to clarify my answer for 7ciii vs 7a, as they ask similar questions, and receive very similar answers by very similar methods.
It feels deceptively trivial reaching the answer I did for 7ciii, given I'd just applied nearly identical methodology in 7a.

Homework Equations


upload_2018-12-1_16-4-49.png

upload_2018-12-1_16-7-27.png

upload_2018-12-1_16-7-39.png

Taken from my annotated formula sheet - sorry about the hideousness
(OneNote version may be accessed as follows) https://www.physicsforums.com/onenote:https://d.docs.live.net/c82407cf764b2842/Documents/PHYS2213/Formula%20Sheets.one#SSD%20V2&section-id={48CAF64B-A001-43B7-8221-48C2D0C1B5D7}&page-id={104A1659-065B-41FD-95B8-3984FF56372D}&end (Web view)

The Attempt at a Solution


OneNote version: https://www.physicsforums.com/onenote:https://d.docs.live.net/c82407cf764b2842/Documents/PHYS2213/2016%20Exam.one#7a&section-id={D5534116-5EA0-45C3-9F75-315FE37CE3C4}&page-id={5FEBB6D7-983C-4DD5-8868-ACB5948F4492}&end (Web view)
PDF attached.
If this is not compliant with the homework template in some way - Please let me know, and I can make relevant edits.
 

Attachments

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  • #2
To answer my own question (An email from my UoS lecturer):
"Your answers are all correct except 7.b, where P atoms replaces group VI atoms and semi2 will be p-type."

I guess this means that I should just take the higher numbered group type as my basis of comparison to the dopant's group, for determining the resultant doping type?
 

1. What is doping in semiconductors?

Doping in semiconductors refers to the process of intentionally adding impurities to a semiconductor material to alter its electrical properties. This is done to create either an excess of electrons (n-type doping) or an excess of holes (p-type doping) in the material, which can be used to control the flow of current in electronic devices.

2. Which element groups are commonly used for doping semiconductors?

The most commonly used element groups for doping semiconductors are group III (boron, aluminum, gallium, indium) and group V (nitrogen, phosphorus, arsenic, antimony) elements. These elements have either one less or one more valence electron than the semiconductor material, making them suitable for creating either n-type or p-type doping.

3. How does doping affect the conductivity of a semiconductor?

Doping can significantly increase the conductivity of a semiconductor. N-type doping creates an excess of electrons, which are negatively charged and can move freely through the material, making it more conductive. P-type doping creates an excess of holes, which are positively charged and can also move through the material, increasing its conductivity.

4. What are some common applications of doped semiconductors?

Doped semiconductors are widely used in electronic devices such as transistors, diodes, and solar cells. They are also used in the production of integrated circuits, which are the building blocks of modern electronic devices such as computers and smartphones.

5. What are the potential drawbacks of doping semiconductors?

One potential drawback of doping semiconductors is that it can introduce defects in the material, which can affect its overall performance. Additionally, the process of doping can be complex and expensive, requiring precise control over the concentration and distribution of dopants in the material.

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