Double heterostructure junction in forward and zero bias

In summary, the conversation discusses the features of a pn homojunction at equilibrium and with forward/reverse bias, including the constant Fermi level and bands bending. The speaker also asks for information on similar features in a semiconductor double heterostructure, including the modification of Fermi levels and bands bending in each region, and the preferred doping for the central region. They also inquire about books or resources on heterostructures.
  • #1
EmilyRuck
136
6
Hi!
When dealing with a pn homojunction, it is easy to see the features it has at equilibrium, and also the features it has with forward/reverse bias. Plots show the constant Fermi level at equilibrium and the different Fermi levels for a forward bias; moreover, examples show how much the bands bending is reduced from an external voltage.
Is it possible to find similar informations for a semiconductor double heterostructure?
In particular, I would like to know, in forward bias:
- how are the Fermi levels modified through all the three regions;
- how much and where is the bands bending modified in the regions;
- what kind of doping it is more convenient for the central region.
Is there a book or a link which can show these features?
Thank you anyway!

Emily
 
  • #3
I know that my questions were very specific. More simply, do you know some books that talk about heterostructures?
 

1. What is a double heterostructure junction?

A double heterostructure junction is a type of semiconductor junction that consists of two different semiconductor materials with different band gaps. The junction is formed by sandwiching a thin layer of one material between two layers of the other material. This creates a built-in electric field at the interface, which can be used for various applications such as light emitting diodes (LEDs) and photovoltaic cells.

2. How does the double heterostructure junction work in forward bias?

In forward bias, a voltage is applied to the junction in the direction of the built-in electric field. This causes the electrons and holes to move towards the junction, where they recombine and emit light (in the case of LEDs) or create a current (in the case of photovoltaic cells). The double heterostructure design helps to confine the charge carriers to a small region, increasing the efficiency of the device.

3. What is the difference between forward and zero bias in a double heterostructure junction?

In forward bias, a voltage is applied to the junction, while in zero bias, no external voltage is applied. In zero bias, the built-in electric field at the junction is still present, but it is not being strengthened or weakened by an external voltage. This can be useful for studying the properties of the junction itself, without the influence of an applied voltage.

4. What are the advantages of using a double heterostructure junction in electronic devices?

Double heterostructure junctions offer several advantages over traditional single material junctions. They can create a stronger built-in electric field, allowing for more efficient light emission or current generation. The confinement of charge carriers in a small region also reduces leakage and improves overall device performance. Additionally, the use of two different materials allows for greater flexibility in designing devices with specific properties.

5. How are double heterostructure junctions used in modern technology?

Double heterostructure junctions are used in a variety of modern technologies, including LEDs, photovoltaic cells, and laser diodes. They are also used in electronic devices such as transistors and integrated circuits. They are essential components in many electronic and optoelectronic devices, and their efficiency and performance continue to be improved through ongoing research and development.

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