How indirect band semiconductors are used in lasers ?

In summary, the conversation discusses the use of indirect band gap semiconductors in lasers and the process of photon emission during a transition. It is mentioned that most lasers in silicon use stimulated Raman scattering as opposed to stimulated emission. However, there is a method of achieving direct stimulated emission in silicon by pumping it hard enough, though it is highly inefficient. The question is then posed to elaborate on Raman scattering.
  • #1
luvagnihotri
1
0
Hi,
I would like to know how we can use indirect band semiconductors in lasers. Such type of semiconductors do not emit photons when transition takes place. Energy is given up as heat to the lattice.

Regards,
 
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  • #2
First of all, indirect band gap semiconductors certainly do emit photons when a transition occurs --- they emit/absorb photons and phonons simultaneously. Second, a material that does not produce photons would be pretty damn useless as a laser or a light-emitting anything!
 
  • #3
As far as I know most of the interest in indirect bandgap lasing comes from people, who are interested in optical processing using silicon because silicon is an indirect bandgap material. As genneth already said, photon emission indeed happens at a transition. It is just not the only process.

Most lasers in silicon are not based on stimulated emission, but on stimulated Raman scattering if I remember correctly, so you need a pump laser in most cases anyway.

Another funny method I recently saw to achieve direct stimulated emission consists of pumping silicon so hard that the whole conduction band - even the states far from the band minimum - is filled with electrons. At some point even the point of the direct transition to the valence band will be filled, so that inversion can be present and lasing can be achieved. However this process is extremely inefficient and you need to pump so hard that two photon absorption losses can become critical and you are always close to destroy your piece of silicon due to the high power you fire at it. But in principle it works - or as my boss once said: If you pump it hard enough, you can achieve lasing in a slice of bread as well. ;)
 
  • #4
Cthugha said:
Most lasers in silicon are not based on stimulated emission, but on stimulated Raman scattering if I remember correctly, so you need a pump laser in most cases anyway.

Good question and answers. While you are at it, could you elaborate more on Raman scattering ?
 

1. What are indirect band semiconductors?

Indirect band semiconductors are materials that have a band gap between their conduction and valence bands, where electrons and holes cannot easily recombine. This leads to a longer lifetime for excited states, making them useful for applications such as lasers.

2. How are indirect band semiconductors different from direct band semiconductors?

Indirect band semiconductors have a lower probability of electron-hole recombination compared to direct band semiconductors. This is due to the difference in the momentum of the electron and hole after absorption of a photon. In indirect band semiconductors, the momentum of the electron and hole is not conserved, making recombination less efficient.

3. How are indirect band semiconductors used in lasers?

Indirect band semiconductors are used as the active material in lasers, where they are pumped with energy to generate light. The long excited state lifetime of indirect band semiconductors allows for the build-up of a population inversion, necessary for laser operation.

4. What are some examples of indirect band semiconductors used in lasers?

Some common indirect band semiconductors used in lasers include gallium arsenide (GaAs), gallium nitride (GaN), and indium phosphide (InP). These materials are used in a variety of laser types, including diode lasers, quantum cascade lasers, and vertical cavity surface emitting lasers.

5. What are the advantages of using indirect band semiconductors in lasers?

Indirect band semiconductors have a longer lifetime for excited states, which allows for a larger population inversion and higher laser efficiency. They also have a wider range of available wavelengths compared to direct band semiconductors, making them suitable for a variety of applications. Additionally, indirect band semiconductors can be integrated with other materials to create hybrid structures for improved performance.

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