- #1
Wouldn't you need the amount of time over which the electrons are flowing? Maybe you mean "number of electrons/second"?RITESHH KAKKAR said:
RITESHH KAKKAR said:
BJT electron flow is specific to Bipolar Junction Transistors, where the flow of electrons is controlled by the movement of both majority and minority charge carriers. This is different from other types of electron flow, such as in a simple circuit, where the flow is solely determined by the movement of majority charge carriers (electrons).
The equation for calculating BJT electron flow is IE = IS(eVBE/VT - 1), where IE is the emitter current, IS is the saturation current, VBE is the voltage between the base and emitter, and VT is the thermal voltage.
The value of saturation current (IS) can be obtained from the datasheet of the BJT or can be calculated using the equation IS = A*q*ni2, where A is the device area, q is the electron charge, and ni is the intrinsic carrier concentration.
The thermal voltage (VT) represents the amount of thermal energy needed to move an electron across a PN junction. It is an important parameter in the BJT electron flow equation as it determines the relationship between the voltage applied to the base-emitter junction (VBE) and the resulting emitter current (IE).
Yes, the BJT electron flow equation can be used for all types of BJTs, including NPN and PNP transistors. However, the values of IS and VT may vary depending on the type of BJT and its characteristics.
