Spin accumulation due to Rashba-Edelstein effect

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In summary, the Rashba-Edelstein effect leads to spin accumulation in the transverse direction due to the electric field-induced band shifts and spin-momentum locking.
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How to see spin accumulation due to Rashba-Edelstein effect from band diagram
I am trying to understand how do we see the spin accumulation due to Rashba-Edelstein effect. I mean everywhere I look people just say a shift in the bands due to e-field which results in spin accumulation in the transverse direction (y in this case) as shown

Capture.JPG


Can somebody explain how to see that? If we talk about the blue circle for example, I would say more up spin with +ve k than -ve k so there will be more spin up accumulation in the positive x direction. Is this wrong? Why would there be any change in y?

I would also like to check if the spin of the electrons should be rotated as the band is shifted
1628759930162.png

If spin-momentum locking is still present (which it should be), the spins should be rotated since the k values are changed?
 
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The spin accumulation due to the Rashba-Edelstein effect occurs as a result of the electric field applied to the material. When the electric field is applied, it causes a shift in the energy bands, resulting in an asymmetry in the band structure. This asymmetry leads to a difference in the spin-orbit interaction between the two bands, resulting in a net spin polarization of the electrons. This is what is referred to as the Rashba-Edelstein effect.As for your questions about the blue circle, you are correct that there will be more up spin with +ve k than -ve k, and this will lead to spin accumulation in the positive x direction. However, the spin accumulation in the y direction will come from the fact that the spins of the electrons in the different energy bands will be rotated due to the spin-momentum locking. This is because, as the electric field shifts the bands, the k-values associated with each band will be changed, which will cause the spins of the electrons in the different bands to rotate. This rotation of the spins will result in a net spin polarization in the y direction.
 

1. What is the Rashba-Edelstein effect?

The Rashba-Edelstein effect is a phenomenon in which a spin current is generated in a material due to the presence of both a spin-orbit coupling and a magnetic field. This effect was first proposed by Yuli V. Nazarov and Yaroslav M. Blanter in 2003 and has since been observed in various materials.

2. What causes spin accumulation in the Rashba-Edelstein effect?

The Rashba-Edelstein effect is caused by the combination of two factors: spin-orbit coupling and a magnetic field. Spin-orbit coupling is a property of certain materials in which the spin of an electron is coupled to its motion, while a magnetic field can induce a spin polarization in a material. When these two factors are present, they can lead to the generation of a spin current and subsequent spin accumulation.

3. How is spin accumulation measured in the Rashba-Edelstein effect?

Spin accumulation can be measured in the Rashba-Edelstein effect using various techniques, such as spin-polarized transport measurements or spin-sensitive spectroscopy. These methods allow for the detection of the spin polarization of electrons in a material, which is indicative of spin accumulation.

4. What are the potential applications of the Rashba-Edelstein effect?

The Rashba-Edelstein effect has potential applications in spintronics, a field that aims to use the spin of electrons for information processing and storage. This effect could be utilized in spintronic devices such as spin valves and spin transistors, which could lead to more efficient and faster electronic devices.

5. Is the Rashba-Edelstein effect reversible?

Yes, the Rashba-Edelstein effect is reversible. This means that the spin accumulation can be converted back into a spin current, which can then be utilized for other purposes. This reversibility is one of the key advantages of this effect and makes it a promising candidate for spintronic applications.

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