- #1
ricky red
- 3
- 0
"An n-type silicon sample has 2x10^16 arsenic atoms/cm3, 2x10^15
bulk recombination centers/cm3, and 10^10 surface recombination
centers/cm2. (a) Find the bulk minority carrier lifetime, the diffusion length,
and the surface recombination velocity under low-injection conditions. The
values of Sigma-p and sigma-s are 5x10^-15 and 2x10^-16 cm2, respectively. (b) If the
sample is illuminated with uniformly absorbed light that creates 10^17
electron-hole pairs/(cm2s), what is the hole concentration at the surface?"
I don't know how to resolve it because the teacher didn't teach us this part of course (we were at the end of the course...). Someone can help me? because i don't know what are bulk recombination and surface recombination.. or, better, Shouldn't are cm^-3*s^-1 anc cm^-2*s^-1??
Thank to all,
Ricky
bulk recombination centers/cm3, and 10^10 surface recombination
centers/cm2. (a) Find the bulk minority carrier lifetime, the diffusion length,
and the surface recombination velocity under low-injection conditions. The
values of Sigma-p and sigma-s are 5x10^-15 and 2x10^-16 cm2, respectively. (b) If the
sample is illuminated with uniformly absorbed light that creates 10^17
electron-hole pairs/(cm2s), what is the hole concentration at the surface?"
I don't know how to resolve it because the teacher didn't teach us this part of course (we were at the end of the course...). Someone can help me? because i don't know what are bulk recombination and surface recombination.. or, better, Shouldn't are cm^-3*s^-1 anc cm^-2*s^-1??
Thank to all,
Ricky