Svein said:You will most likely have a temperature-dependent leakage current. Also see post #3.
https://en.m.wikipedia.org/wiki/Saturation_currentsatominari said:Thanks for the reply. But could you explain or give me a link about temperature dependent leakage current? Thank you so much!
See for example http://www.onsemi.com/pub/Collateral/1N4001-D.PDF, page 3 for a real-world example.satominari said:Thanks for the reply. But could u explain or give me a link about temperature dependent leakage current? Thank you so much!
Reverse current in diode equation occurs because of the flow of minority carriers in the opposite direction of the forward current. This is caused by the built-in potential barrier in the diode, which prevents the flow of majority carriers in the reverse direction.
The built-in potential barrier is created by the difference in doping concentrations between the p-type and n-type regions of the diode. This barrier acts as a barrier to the flow of majority carriers in the reverse direction, resulting in reverse current.
In theory, reverse current can be eliminated by applying a large enough reverse voltage to overcome the built-in potential barrier. However, in practical applications, this is not always possible and reverse current must be managed and minimized through proper circuit design.
The amount of reverse current in a diode is affected by various factors such as temperature, doping concentration, and the physical structure of the diode. Higher temperatures and increased doping concentrations can lead to higher levels of reverse current.
No, reverse current can sometimes be intentionally used in certain applications, such as in diode-based voltage regulators or in switching circuits. However, in most cases, reverse current is undesirable and steps are taken to minimize its effects on circuit performance.