Firstly thanks.
Secondly, i suppose, whatever you have said, is right. However, this is not the answer to my question. I do understand that the electron mobility is approximately three times as that of hole.
Reiterating the question once again. With regards to my diode/rectifier case, i have...
I suppose, i should have rather written as p+nn+. If you are familiar with power rectifiers, it is quite common notation used in there, to denote the high voltage rectifier.
High voltage rectifiers are fabricated in silicon which is either n-type or p-type.
1. "p" refers to quantity of the...
Hi,
I suppose, you have not understood the question properly.I know that once the diode is on, it supports only a voltage equal to built-in-potential (0.7V) as large current flows in this situation.On the other hand, it is only in the reverse biased condition, the diode allows very little...
1. Diodes are fabricated by diffusing either n type dopant into p-type silicon or p-type dopant into n-type silicon. So, in the former case, it is called as a n-p diode and p-n diode in the latter case.
2. Breakdown voltage of a diode is a case when it is reverse biased. which means when the...
Hiya,
Being a computer science and eng first year student, just trying to understand one artical regarding Breakdown voltage of a pn junction.Could anybody explain me, which diode out of the following have higher breakdown voltage if they have same design parameters such as doping and...
Hi,
Being a computer science and eng first year student, just trying to understand one artical regarding Breakdown voltage of the pn junction.Could anybody explain me, which diode out of the following have higher breakdown voltage if they have same design parameters such as doping and thickness...