Recent content by grandmessage

Seems logic and strange. With out changing the Fermi levels of materials,they brought into equilibrium even at low contact potentials just with their smaller geometry/volume alone...

If Fermi level of semiconductor reduced by geometry, then the Fermi levels align at the Schottky contact with smaller potential difference. because of smaller volume a small amount of electron diffusion(and hence the small potential difference) can bring the Fermi level of semiconductor to align...

Hello sir, Please check the Link here, Where we can find simplified form of Fowler-Nordheim equation here also they says the minimum field required is 3×10^7 V/cm. But for a metal of work function ∅=5eV and local electric field(E-local) 10^4V/cm it gives a minimum filed emission current...

Hello everyone, a number of books and web articles says that the minimum field required is ≈10^7V/cm for electrons field emission/tunneling from the surface of metals. But fowler-nordheim formula shows that there is still considerable amount of field emission current density (mA/cm2) even...

Hello sir, Thank You very much for your valuable reply, I can understand a lot..Still i have a number of sub-questions regarding the same. Thanks.

Hello sir, Thank you for your reply.. But really i can't understand what happens when the second contact is ideal, i.e. no schottky barrier, You say's that " the semiconductor E-field would repel surface electrons in the metal and leave behind positive ions ", How this is happening.? Can you...

Hello Everyone, We know how a schottky barrier forms with a depletion region of width 'W' and contact potential 'qV' as shown in below figure, http://homepage.ntlworld.com/beehive77/images/ntypeschottky.jpg The depletion width 'W' depends mainly on doping concentration of the...