Recent content by Robotduck

Please correct me if I am wrong: With positive bias on metal side and negative on semiconductor- it will attract the electrons from the metal leaving immobile positive ions at the metal -semiconductor interface on the metal side ( this positive ion layer ) and on the semiconductor side - due to...

MOS (p type) 1) Figure a) and b) are the cases of strong inversion. Figure b)-For high frequency signals, electrons at the semiconductor oxide interface do not get enough time to change ( I follow that ), but how come the charge in the bulk close to the depletion region changes with these high...

I am sorry but I still do not follow this. Please tell me if I am wrong: " When an electron is excited from Valence band to conduction band, let's say in case of a silicon we provide just Eg to an electron to excite it to Ec. At this state , the energy of an electron is stored as PE. The...

Thank you so much. One last question on this: How do we get a negative charge sheet on the metal side in a Metal -n type semiconductor contact ? Thank you

Thank you so much for sharing this document. But it is difficult to understand. I thought that the electrons in the conduction band are free to move. Free electron energy is considered as Kinetic energy. Then How come the energy of an electron right at Ec is Potential Energy ? I really am...

Thank you so much for the reply. But Can you please elaborate more on this: "b) The Schottky barrier - a barrier for electrons to move from the metal to the semiconductor - is the difference between the work function of the metal and the electron affinity of the semiconductor. It doesn't change...

Hi, Can anyone explain the concept of K.E. and P.E. in a semiconductor? Why Ec (lower level of Conduction Band) is considered as P.E. ? and why the Difference between the higher energy state and Ec is Kinetic energy ? I understand it if I look at the Bohr model but I am not clear how to look at...

Assume n type semiconductor: 1) Can the fermi level of metal change when it makes contact with the n type Semiconductor ? What assumptions do we make in ideal situation ? 2) Is the Schottky Barrier in Metal Semiconductor contact remains constant with an applied forward or reverse voltage ? 3) On...