Recent content by staraet

when an electron passes across the junction of e-b i.e; n to p in npn it need energy. i'm very sure of this; it is definite. it cannot have even a bit of force by junction when it comes out of the junction width. coming out of the junction width means just entering the base. what...

always think in terms of gain and loss we some thing goes along only acting force , it gains k.e so decreases its p.e when ball falls, so it means, going along a force, so increases k.e (say after dt); then if u find k.e is constant-- it means body has spent that k.e in either heat...

w=f.d f=m.g d=distance moved earth does -ve work , you do equal +ve. ok! +ve change in potiential energy always needs external energy source. so W=U2-U1=m.g.d

anyone has any modifications?

i already interpreted it before(base was thin), but not sure if in that case we can procede as followed: the area near base-edge will get accumilated by electrons due to high potientials. then as base is thin, and only some can pass, electrons get crowded, due to which potiential...

can u visit my thread in physics>atomic...>potientials in npn transistor -------------------------------------------------------------------------------- i have a query on same transistors... thk u

this query was previously in electrical engg; later i found that it actually have to be solved as a solid state physics one. (as in books) In an n-p-n transistor, emitter grounded, electrons enter the emitter from ground , where 90-98% come out of collector, and rest go out of the base. In...

"""since Vce is higher tha Vbe """ not always is Vce is higher than Vbe... i already mentioned in starting that Vbe=0.7-0.8 in saturation;Vce=0.2-0.25;

ok let's have another approach... suppose all values Vbe, Vce, Ib, Ic, Ie... are Constant...i,e.now we are at anyone single point in characteristic curves. now if an electron, starting from earth(emitter ground) , travels all it's way to Vce; can anyone say how the potiential changes...

i agree with you that it can't be forward... what about when transistor is in saturation? where Vbe is around 0.8 V... also why will electrons (presently in p material) go to a attracting 0.2 V leaving 0.65-0.75 attraction towards base? thank you

""""since electrons which have come from emitter and are now in the base they are attraced due the positive voltage applied at the n type so they flow easily """" as you said above, due to 0.2 V they get attracted easily; but a much higher 0.65 V is pulling them to base region...

if it is like a diode, then it is operating in reverse bias, which allows only small currents (usually in micros) . Another factor is such that , how can current pass comfortably in reverse bias (C-B), where it could not in forward potiential barrier (B-C)? Thank you

current direction? in transistor (npn) saturation, we know (in CE) Vbe=~0.75 V. and Vce is around 0.2 V. In such a case according to characteristic plots, we know Ic flows to emitter (via base) But current always flows from higher to lower potentials. Why in this case it is not? please...