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staraet
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this query was previously in electrical engg; later i found that it actually have to be solved as a solid state physics one.
(as in books) In an n-p-n transistor, emitter grounded, electrons enter the emitter from ground , where 90-98% come out of collector, and rest go out of the base.
In saturation, Vbe=0.7-0.8 V. where as Vce=0.2-0.25 V.
now consider electrons in p material; they have two routes; one out of the base & other out of collector.
why does most of electrons go out of collector(0.2 V) inspite of having a greater (0.75 V) attracting voltage at base?
please answer qualitatively.
(as in books) In an n-p-n transistor, emitter grounded, electrons enter the emitter from ground , where 90-98% come out of collector, and rest go out of the base.
In saturation, Vbe=0.7-0.8 V. where as Vce=0.2-0.25 V.
now consider electrons in p material; they have two routes; one out of the base & other out of collector.
why does most of electrons go out of collector(0.2 V) inspite of having a greater (0.75 V) attracting voltage at base?
please answer qualitatively.