electrons will flow into the semiconductor from the metal until enough negative charge has accumulated in the semiconductor to give an electric field strong enough to stop the flow of charge. The electric field comes from the semiconductor having a net negative charge (where before it was...
Thanks for the bump. I can try to word it more simply, my original post is a bit of a mouthful. Here goes...
p-n junctions form because electrons and holes diffuse across the junction, causing the regions either side to be depleted of charge. All the behavior associated with p-n diodes stems...
Its almost definitely higher than 1. How valid is the assumption that the M-S-M structure behaves like a parallel plate capacitor? How does the I-V characteristic of the device look? What do you know about the interface between the metal and the semiconductor i.e. are the built in potentials?
I'm trying to reconcile how a built-in potential can form in a semiconductor heterojunction in which there is a significant band cliff to majority carrier diffusion from both sides of the junction i.e. there is a cliff which should block hole diffusion from the p-type as well as a cliff which...
If you want to use it for a series of planar thin films, there is freely available MATLAB code from these guys: http://onlinelibrary.wiley.com/doi/10.1002/adma.201000883/abstract
Have a look at the paper to see if that's the kind of thing you need it for and if so, I think the code is somewhere...