Ok to use MOSFET body diode as flyback protection?

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SUMMARY

The discussion centers on the use of the internal body diode of the IRFP3206 MOSFET as flyback protection in motor controller applications. While the internal diode can handle a maximum pulsed current of 840 Amps, it is not advisable to rely on it for flyback protection due to its higher forward voltage of 1.3V and slower reverse recovery time compared to an external Schottky diode. Experts recommend using a dedicated fast diode across the load to effectively manage inductive load switching and prevent excessive power dissipation and heating of the MOSFET.

PREREQUISITES
  • Understanding of MOSFET operation and characteristics
  • Familiarity with inductive load switching principles
  • Knowledge of diode types, specifically Schottky diodes
  • Basic circuit design for motor controllers
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  • Research the specifications and advantages of Schottky diodes for flyback protection
  • Learn about the thermal management of MOSFETs in motor control applications
  • Study the impact of reverse recovery time on switching losses in power electronics
  • Explore circuit design techniques for effective inductive load management
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Electrical engineers, motor control designers, and anyone involved in power electronics who seeks to optimize the performance and reliability of MOSFETs in inductive applications.

TheAnalogKid
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Hello,

I am designing a motor controller, and I was curious about the MOSFETs I'm using that have an internal body diode zener for Vds protection that is common in a lot of datasheets.

I am switching the coils of the inductor with these MOSFETs, and I would like to know if its unwise to assume to use the internal zener diode of the MOSFET as my flyback diode when I am switching the inductor.

The part I'm using is IRFP3206 and I see the max pulsed current is 840 Amps for the FET's diode, and I can do the calculations to approximate the flyback current, so I think it is ok to use.

But, I just am cautious to use the internal diode for a specific function, when it seems like it is put in more to protect the FET junctions as a general purpose protection. Is this done in practice?
 
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I'm not sure if it's normal practice or not (I'd guess not), but with a forward voltage of 1.3V you're wasting power compared to an external Schottky for instance. Also, the reverse recovery time of the internal diode is typically not as fast as it will be with an external diode. Hard to tell if these are issues with the limited information you provided. Good luck.
 
gnurf said:
I'm not sure if it's normal practice or not (I'd guess not), but with a forward voltage of 1.3V you're wasting power compared to an external Schottky for instance. Also, the reverse recovery time of the internal diode is typically not as fast as it will be with an external diode. Hard to tell if these are issues with the limited information you provided. Good luck.

Thank you very much for the response. I didn't take these factors into consideration, and they seem to be good arguments for using an external diode.
 
When you switch an inductive load with a FET or transistor, the main spike is positive going, so a diode across the FET isn't going to help unless it is a Zener diode.

The diode needs to be a fast one and across the load with the anode connected to the drain of the FET.

The diode in Mosfets is usually shown as a Zener, but this would break down at some fairly high voltage (maybe 50 volts or so), so the power dissipated would be quite high and it would add to the heating of the FET.
 

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