Discussion Overview
The discussion revolves around the challenges of etching deep SiO2 (fused quartz/silica) wafers, specifically targeting a bulk etch depth of 300-400μm. Participants share their experiences, techniques, and materials used in the etching process, exploring both mechanical and chemical methods.
Discussion Character
- Exploratory
- Technical explanation
- Debate/contested
- Experimental/applied
Main Points Raised
- One participant reports difficulties in achieving a detailed anisotropic etch on SiO2 wafers, having tried various masks with limited success.
- Another participant recalls using mechanical powder blasting for etching glass wafers, noting that it allows for ~300μm diameter through-holes but may not be available to the current poster.
- Discussion includes the use of 49% HF for wet etching, with a noted etch rate of about 1μm/min, though concerns about mask durability are raised.
- A participant suggests using a thin Cr or Ti layer under Au to mitigate undercutting during etching, despite potential delamination issues.
- There is mention of the possibility of using a Focused Ion Beam (FIB) as a more expensive alternative for etching, but it is characterized as a serial process suitable for fewer holes.
- One participant expresses uncertainty about the dielectric strength of Pyrex compared to fused silica, referencing conflicting information from different sources.
- Another participant indicates that they found valuable insights in the work of F.E.H. Tay, which may lead to cost savings by switching to a different substrate and mask material.
- There is a suggestion to explore laser drilling as another potential method, although one participant admits to being unfamiliar with its challenges and costs.
Areas of Agreement / Disagreement
Participants express a range of techniques and materials for etching SiO2, with no consensus on the best approach. Some participants share successful methods while others highlight ongoing challenges and uncertainties in achieving the desired etch depth.
Contextual Notes
Participants note limitations in their current methods, including the availability of certain etching techniques and the need for further research into dielectric properties of materials used.
Who May Find This Useful
This discussion may be useful for researchers and practitioners in microfabrication, particularly those working with SiO2 etching techniques and materials.