Can the BPX81 PhotoTransistor Circuit be Modified to Output 3.3V on IC1.1?
- Thread starter anita1984
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SUMMARY
The BPX81 PhotoTransistor circuit can be modified to output approximately 3.3V at IC1.1 by ensuring the BPX81 is nearly saturated, requiring at least 1mW/cm² illumination at 850nm. To achieve this, increase the resistance of R3 to several tens of K-ohms while keeping R2 at 500 ohms or less. Additionally, adding a catch diode from IC1 pin 1 to the 3.3V supply is recommended to prevent excessive input voltage. The optimal value for R3 will depend on the required switching speed of the circuit.
PREREQUISITES- Understanding of BPX81 PhotoTransistor operation
- Knowledge of circuit design principles
- Familiarity with resistor values and their impact on circuit performance
- Experience with diode placement in electronic circuits
- Research the impact of illumination intensity on BPX81 performance
- Learn about the effects of resistor values on switching speed in transistor circuits
- Explore the use of catch diodes in protecting circuit components
- Investigate alternative photoresistor options for achieving 3.3V output
Electronics engineers, hobbyists designing sensor circuits, and anyone looking to optimize photoresistor-based applications for specific voltage outputs.
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