In a degenerate n-type semiconductor with a doping concentration gradient, the Fermi level remains constant throughout the system at equilibrium, but the energy levels of the conduction and valence bands change based on the local doping concentration. The relationship between the Fermi level and the conduction/valence band energies is influenced by the doping profile, particularly in regions like p-n junctions where the doping concentration varies. In the depletion region, the energy difference between the conduction band and the Fermi level shifts due to electrostatic potential changes caused by unbalanced charge. To accurately determine these energy variations, one must consider the local dopant concentration and solve the Poisson-Boltzmann equation. Understanding the intrinsic Fermi level's behavior in this context requires a deeper exploration of these physical principles.