Common-Source JFET Amplifier problem

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The discussion focuses on designing a bias circuit for a Common-Source JFET amplifier, specifying a desired Q-point of ID = 2.0 mA and VDS = 6.0 V. Participants clarify that VGS(off) represents the pinch-off voltage for the transfer plot and discuss the significance of rds, which is the ON resistance from Drain to Source, typically measured in ohms rather than kilohms. It is noted that rds is not involved in the load line for a transistor amplifier operating in saturation but can help determine unknown parameters. Additionally, a reference link to a JFET resource and a datasheet for the 2N3819 are provided for further assistance. The conversation emphasizes the importance of accurate calculations and understanding of JFET characteristics in amplifier design.
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Homework Statement


For the prelab assume that the JFET has the following typical specifications:
IDSS = 10.0 mA
VGS(OFF) = -3.5 V
rds = 50.0 kW
1. Complete the design for the bias circuit in Figure 1 given that the desired Q-point for the
JFET is ID = 2.0 mA and VDS = 6.0 V by following these steps:
(a) Calculate the following values for this JFET:
VGS = _____________ gm = _____________

15x7tah.png


Homework Equations



gm = 2 * Id / Vgs - Vth

The Attempt at a Solution



Is it safe to assume that VGS(off) is the pinch off voltage for the transfer plot?
What is rds?
 
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NascentOxygen said:
rds is the ON resistance from Drain to Source, i.e., when VGS=0, the JFETS's miminum* resistance. Typically 10s to 100s of Ohms for ordinary JFETs. rds has units of Ω, not kW. You may include rds when determining the slope of the load line.

A transistor amplifier is operated in saturation, so rds wil not be involved in any load line. It may, however, help to determine some unknown transistor parameter. As mentioned, rds is the approximate resistance between the drain and source when the transistor is in triode with vds small.

Edit: And yes, that will be the pinch off voltage.
 
Last edited:

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