Coulomb Blockade & Single Electron Transistors Explained

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SUMMARY

Coulomb blockade is a phenomenon that occurs in Single Electron Transistors (SETs), where the presence of a single electron creates a repulsive potential barrier that prevents additional electrons from being trapped. This effect is crucial for the operation of SETs, as it allows for the control of electron flow by adjusting the potential with a gate electrode. Tinkham's "Introduction to Superconductivity" provides a comprehensive explanation of this concept, particularly in the context of small junctions. Understanding Coulomb blockade is essential for advancements in nanoelectronics and quantum computing.

PREREQUISITES
  • Understanding of quantum mechanics principles
  • Familiarity with Single Electron Transistor (SET) technology
  • Knowledge of potential barriers in semiconductor physics
  • Basic concepts of gate electrode functionality
NEXT STEPS
  • Read Tinkham's "Introduction to Superconductivity" for detailed insights on small junctions
  • Explore the principles of quantum tunneling in semiconductor devices
  • Investigate the design and applications of Single Electron Transistors
  • Study the role of gate electrodes in controlling electron confinement
USEFUL FOR

Researchers, electrical engineers, and physicists interested in nanoelectronics, quantum computing, and the design of advanced semiconductor devices will benefit from this discussion.

tianyi.tan
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Hello! Can someone please enlighten me about coulomb blockade & how its relevant to Single Electron Transistors? Thanks :))
 
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Try to find a copy of Tinkham's "Introduction to superconductivity", it is explained quite well in the chapter on small junctions.
 
If you trap 1 electron in a dot between two leads ----o---- it will cause a repulsive potential barrier for another electron that could have been trapped there -to high, so it cannot be trapped -Its blocked by coulomb repulsion. To overcome this you lower the potential close to the dot with a gate electrode, and now the electron 2 could be trapped also. But the 3:d electron is blocked from the 2 electrons to be trapped, so you must lower the gate potential again, and so on.
 

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