Delocalization of states in valence band du to doping

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Discussion Overview

The discussion focuses on the delocalization of states in the valence band of semiconductors due to doping. Participants explore the concept of localization of states, the effects of n-doping and p-doping, and the implications for energy spectra and effective Bohr radii.

Discussion Character

  • Exploratory, Technical explanation, Conceptual clarification

Main Points Raised

  • One participant asks for an explanation of the types of localization of states in semiconductors.
  • Another participant presents a mathematical model using the envelope wave function, suggesting that n-doping leads to an energy spectrum similar to that of a hydrogen atom, with specific equations for energy levels and effective Bohr radius.
  • A third participant expresses difficulty in understanding the implications of the effective Bohr radius being about 5nm.
  • A later reply elaborates on the concept of doping, explaining that before doping, the semiconductor has a stable electron distribution, and that p-doping introduces holes that are influenced by the potential of the doping atom, affecting their effective Bohr radius.

Areas of Agreement / Disagreement

Participants do not appear to reach a consensus on the understanding of delocalization and localization of states, as some express confusion about the concepts and calculations presented.

Contextual Notes

There are limitations in the discussion regarding the assumptions made in the mathematical models and the definitions of terms like effective Bohr radius and localization types, which are not fully clarified.

abid
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How delocalization of the states in the valence band occurs. Can somebody explain how many kinds of localization of states are there in semiconductors.
 
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If you use the envelope wave function, you get an H-atom like energy spectrum (e.g. for n-doping):
<br /> E_D(n) = E_C+\frac{m*}{c^2 m}E_H = E_C - 13.6 eV \frac{m*}{j^2c^2m}
where Ec is the energy of the conduction band, m* the effective mass of an electron, and j an integer.
From that, you get an effective Bohr radius of about 5nm, which is two orders of magnitude larger than a0.
 
i could not understand it much though i get the idea of spread in band due to 5nm
 
The idea behind it is:
Before it gets doped, the semiconductor is perfectly happy with its electron distribution. Then it gets, e.g., p-doped. Nothing holds the extra hole anywhere except for the potential of the doping atom, so you can calculate its effective Bohr radius as said above, taking all the potentials into account.
 

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