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Elliptic

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I need help on this topic, where to find text about this, and models that describe it (Varshni's model, linear model,...)

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- Thread starter Elliptic
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In summary, the energy gap of intrinsic semiconductors is the difference in energy between the valence band and the conduction band at 0 Kelvin. It decreases with increasing temperature, resulting in higher electrical conductivity. This is in contrast to extrinsic semiconductors, where the energy gap can be manipulated by adding impurities. The temperature dependence of the energy gap can be used to control the electrical conductivity of intrinsic semiconductors in various applications.

- #1

Elliptic

- 33

- 0

I need help on this topic, where to find text about this, and models that describe it (Varshni's model, linear model,...)

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dlgoff

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http://scholar.google.com/scholar?q=Varshni+model+for+Si+and+Ge

The energy gap of intrinsic semiconductors is the difference in energy between the valence band (highest energy level occupied by electrons) and the conduction band (lowest energy level where electrons can move freely) at 0 Kelvin, also known as absolute zero temperature.

The energy gap of intrinsic semiconductors decreases as temperature increases. This is because at higher temperatures, more electrons in the valence band gain enough energy to jump to the conduction band, making it easier for current to flow.

The energy gap and electrical conductivity of intrinsic semiconductors have an inverse relationship. As the energy gap decreases, the number of electrons in the conduction band increases, resulting in higher electrical conductivity.

The energy gap of intrinsic semiconductors is fixed and does not change with the introduction of impurities, while the energy gap of extrinsic semiconductors can be manipulated by adding impurities to the material.

Yes, as temperature increases, the energy gap decreases and the electrical conductivity increases. This can be used to control the conductivity of intrinsic semiconductors in various applications, such as in thermoelectric devices.

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