The values of n and p represent the concentrations of electrons and holes in a semiconductor, respectively. These concentrations determine the conductivity and other important properties of the material.
The values of n and p can be calculated using the following equations:n = (ND - NA + √( (ND - NA)^2 + 4Ni^2 )) / 2p = (NA - ND + √( (NA - ND)^2 + 4Ni^2 )) / 2where NA and ND are the concentrations of acceptor and donor impurities, Ni is the intrinsic carrier concentration, and √ represents the square root function.
The intrinsic carrier concentration, Ni, is the concentration of electrons and holes that exist in a pure, undoped semiconductor at thermal equilibrium. It is related to the values of n and p through the equation:Ni = n * pAt thermal equilibrium, the product of n and p is equal to Ni.
The values of n and p are directly proportional to temperature. As temperature increases, the number of thermally generated electron-hole pairs also increases, resulting in higher values of n and p.
The values of n and p are indirectly proportional to the doping concentrations NA and ND. Higher doping concentrations lead to a higher number of impurities in the semiconductor, reducing the number of available electrons and holes and thus resulting in lower values of n and p.