Fermi Energy level with respect to band gap energy

AI Thread Summary
The discussion focuses on calculating the Fermi energy level (Ef) in silicon relative to the bandgap center at various temperatures (200, 400, 600 K). Key equations involve the intrinsic carrier concentration (ni) and the relationship between Ef, the conduction band energy level (Ec), and temperature using Boltzmann's constant. Participants express uncertainty about how to approach the problem and inquire about necessary variables like carrier concentration and density of states. Clarification on these variables is essential for solving the equation effectively. Understanding these concepts is crucial for accurate calculations in semiconductor physics.
Matt1234
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Homework Statement


Calculate Efi with respect to the center of the bandgap in silicon for t= 200, 400, 600 kelvin.


Homework Equations


ni = Nc e^-((Ec- Ef)/(kt))

k = boltzman constant
t= temperature in kelvin
Ec = energy level of the conduction band
ef= fermi energy level
ni= carrier concentration
Nc = densitiy of states in conduction band


The Attempt at a Solution



Im not sure how to approach this problem, please help.
 
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You should have been given all the other variables to be able to solve this. Do you know the concentration and the density of states?
 
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