Field effect transistor made of graphene: how does it work?

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SUMMARY

The discussion centers on the operation of field effect transistors (FETs) made from graphene, as first described in the 2004 paper by Geim and Novoselov. Unlike conventional p-type and n-type semiconductor transistors, graphene lacks a band gap, which complicates its use in FETs. The key insight is that the electronic density of states at the Fermi level in graphene is zero, resulting in low conductivity when undoped. However, applying a gate bias can significantly increase conductivity, demonstrating the unique properties of graphene-based FETs.

PREREQUISITES
  • Understanding of field effect transistors (FETs)
  • Knowledge of p-type and n-type semiconductor behavior
  • Familiarity with graphene properties
  • Basic concepts of electronic density of states
NEXT STEPS
  • Research the impact of gate bias on graphene conductivity
  • Explore the differences between conventional semiconductor FETs and graphene FETs
  • Study the implications of zero band gap in graphene for electronic applications
  • Investigate doping methods for enhancing graphene conductivity
USEFUL FOR

This discussion is beneficial for electrical engineers, materials scientists, and researchers interested in advanced semiconductor technologies, particularly those focusing on graphene applications in electronics.

Naamean
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Hi folks,

I am desperately trying to understand how this device is working... I would like to precise that I understand how field effect transistors/junctions based on p- and n-types semi-conductors are working (with a p-type gate it is ok; with a n-type gate it is already less ok since holes transport is not intuitive to me).

I am trying to make a parallel between these "conventional" transistors and the one made out of graphene described for the first time in Novoselov's paper of 2004 ("Electric field effect in atomatically thin carbon films"). But I don't see what happens between the graphene and the silicon.

Could anybody please help me on this?
 
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Well, graphene doesn’t have a band gap, so FETs don’t work very well. The field effect referred to in the paper by Geim and Novoselov has to do with the fact that the electronic density of states at the Fermi level is zero in graphene (and nonzero everywhere else), so that if you have graphene that is completely undoped, its conductivity is quite low, but if you dope it even a little (say, by applying a gate bias), the conductivity goes up pretty steeply.
 

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