[ Mod note: moved from Elec Eng, might have better luck here] I have some basic knowledge of how FET work. But i have a question that i can't see the answer. For example: In a MOSFET we have a p-doped Silicon substrate. Then we have two n-doped silicons, with a oxide layer above the the p-doped Silicon substrate. When we increase the gate voltage, we are creating a n-type channel between the n-doped silicons (called the inversion layers). The more we increase the gate voltage the more electrons can move in the n type channel. My question is, why in the recent papers, the new 2D semiconductors, like metal transition dichalcogenides, are used as n type channel? What is their function? They increase the carriers mobility inside the channel?