How to Calculate Intrinsic Fermi Energy of Silicon?

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Homework Help Overview

The discussion revolves around calculating the intrinsic Fermi energy of silicon, specifically in the context of its energy gap and intrinsic carrier concentration. Participants explore the relationship between the Fermi energy and the band gap in intrinsic silicon.

Discussion Character

  • Conceptual clarification, Problem interpretation, Assumption checking

Approaches and Questions Raised

  • Participants discuss the position of the Fermi energy in relation to the band gap and question how to determine its exact value. There are inquiries about the calculation methods and the significance of the intrinsic carrier concentration.

Discussion Status

Some participants have provided insights into the relationship between the Fermi energy and the band gap, while others are still seeking clarification on specific calculations. There is an acknowledgment of the midpoint of the band gap as a reference for the intrinsic Fermi energy, but not all participants agree on the implications or details of this reference.

Contextual Notes

Participants mention the lack of absolute reference for potential energy and the need for specific equations to relate the Fermi energy to the conduction band in n-type silicon. There is a focus on intrinsic versus extrinsic cases in the discussion.

kylie14
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I've tried to look this up online, but I can't find it anywhere. I'm just looking for the intrinsic fermi energy of silicon E_i ?
Can someone maybe direct me towards a website where I could look it up? Either that, or is there a way to calculate it from the energy gap for intrinsic silicon (1.12eV)? I also know the intrinsic carrier concentration n_i (1.5 x10^10 cm^3).
Thanks in advance
 
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If the Si is undoped (i.e. intrinsic), the Fermi energy is in the middle of the band gap. Then the concentration of electrons and holes is equal. Doping the Si moves the Fermi energy toward either the conduction or valence band, depending on the type of dopant,
 
Yes, but how to I find out where the what the energy is at the centre of the band gap?
Thanks for your reply
 
I don't understand your question. What more do you need to know besides, "in the center of the band gap". There is no absolute reference for potential energy, so the value of the energy relative to the band edges is all you ever need to know.
 
I needed it because it appeared in an equation I needed to find how far the fermi energy is below the conduction band in n-type silicon.
I've just found another equation though, and you're right. I can find the distance between E_f and E_i, using
E_f - E_i = kT ln(n/n_i)
and then if E_i is in the middle of the band gap then that tells me how far E_f is below the conduction band edge.
Sorry, I'm with it now, thanks for your help.
 
Ei is in the middle of the band gap. Since the band gap is 1.12 eV wide, as you said, Ei is 0.56 eV below the conduction band edge (and also 0.56eV above the valence band edge). Suppose you have n = 1E18, and ni = 1.5E10. Then the Fermi level at room temperature is kT log(n/ni) = 0.46 eV above Ei, which puts it 0.10 eV below the conduction band edge. Does this do it?
 
Yes, I think that's it. Thanks again!
 
Please help :
Need expression that relates Ei and Eg both intrinsic and extrinsic case
 

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