SUMMARY
This discussion focuses on calculating the Ton for Silicon Carbide (SiC) Insulated Gate Bipolar Transistor (IGBT) power devices. The key steps involve determining the gate voltage to optimize the collector-emitter voltage drop and using the junction curves from the datasheet to establish the volt/amp characteristics. Power losses are calculated by multiplying the voltage drop across the collector-emitter (CE) by the current flowing through the gate. Iterative calculations may be necessary to achieve the desired accuracy.
PREREQUISITES
- Understanding of SiC IGBT operation and characteristics
- Familiarity with datasheet analysis, specifically for power devices
- Knowledge of voltage drop calculations in electronic circuits
- Basic circuit analysis skills to determine current flow
NEXT STEPS
- Review the IXYS datasheet for the IXGH48N60B3C1 SiC IGBT to understand its specifications
- Learn about calculating power losses in IGBT devices
- Study the impact of gate voltage on collector-emitter voltage drop
- Explore iterative methods for improving accuracy in circuit calculations
USEFUL FOR
Electrical engineers, power electronics designers, and anyone involved in optimizing the performance of SiC IGBT power devices will benefit from this discussion.