MOSFET I-Vg Curve: Which Curve is Impossible?

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SUMMARY

The discussion centers on identifying which I-Vg curve is impossible for MOSFETs, with participants debating between curve #1 and curve #5. Curve #1 is deemed impossible due to representing infinite gain, while curve #5 is questioned for showing current in the subthreshold region, potentially indicating reverse breakdown from electron tunneling in the gate oxide. The consensus leans towards curve #1 being the clear choice for impossibility.

PREREQUISITES
  • Understanding of MOSFET operation and characteristics
  • Familiarity with I-Vg curve analysis
  • Knowledge of subthreshold and quadratic regions in MOSFETs
  • Concept of electron tunneling and gate oxide breakdown
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  • Research the characteristics of MOSFET I-Vg curves
  • Study the implications of infinite gain in electronic components
  • Learn about electron tunneling effects in gate oxides
  • Explore simulation tools for MOSFET behavior, such as TiberCAD
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Electrical engineers, semiconductor physicists, and students studying MOSFET technology and electronic circuit design will benefit from this discussion.

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Homework Statement
Below graph shows the I - Vg curve for different MOSFET, which curve is impossible for MOSFET?
Relevant Equations
I - Vg
Homework Statement: Below graph shows the I - Vg curve for different MOSFET, which curve is impossible for MOSFET?
Homework Equations: I - Vg

I am inclined to select 1), as it is not likely to have a sharp transition from subthreshold to Quadritica region. However, graph 5 also looks strange, since it somehow shows current in at subthreshold region. I am therefore confused about whether it should be 1) or 5).
 

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I would agree. Could be either.
 
Tom.G said:
Curve #5 reminds one of reverse breakdown (due to Electron tunneling) of the gate oxide.
You can't tunnel with zero Vgs!
 

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