N-type semiconductor -- calculate the doping level

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To calculate the doping level in an N-type semiconductor, it's essential to understand the relevant equations and concepts related to doping, such as carrier concentration and the relationship between donor atoms and free electrons. Utilizing resources like textbooks on semiconductor physics and articles from reputable sources, including Wikipedia, can provide foundational knowledge and equations needed for these calculations. Engaging with online forums or study groups can also offer guidance and clarification on specific problems. Starting with the basic principles of semiconductor theory will help in grasping the complexities of doping levels. Familiarizing oneself with these resources is crucial for mastering the topic.
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Homework Statement
An n-type silicon (Si) is produced by doping with phosphorus (P).

The electrical conductivity measurement of the doped Si shows the charge-carrier concentration to be 3.091 x 1017 cm-3 at room temperature.

Calculate the doping level of P and express your answer in units of gram of P per kilogram of Si.
Relevant Equations
Nothing given
Completely lost on this question. Any help would be great, even a direction to start moving would be helpful.
 
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Welcome to the PF. :smile:

What learning resources have you been using on this subject so far? Which textbook, and what additional links and resources?

Can you point out the Relevant Equations in this article at Wikipedia, for example?

https://en.wikipedia.org/wiki/Doping_(semiconductor)
 

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