Problem with NEGF in real space

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SUMMARY

The discussion centers on the challenges faced by a Ph.D. student, Reza, while simulating Graphene Nanoribbon (GNR) MOSFETs using the Non-Equilibrium Green's Function (NEGF) method in real space. The primary issue involves calculating electron density when transitioning from mode space to real space simulations. Participants inquire about the coupling with a Poisson solver and the handling of gate voltage (Vg) and bias in the MOSFETs, indicating that these factors are critical for accurate simulations.

PREREQUISITES
  • Understanding of Non-Equilibrium Green's Function (NEGF) methodology
  • Familiarity with Graphene Nanoribbon (GNR) MOSFETs
  • Knowledge of Poisson solvers in semiconductor simulations
  • Experience with gate voltage (Vg) and bias in MOSFET operation
NEXT STEPS
  • Research the implementation of Poisson solvers in NEGF simulations
  • Study the effects of gate voltage (Vg) on GNR MOSFET performance
  • Explore advanced techniques for calculating electron density in real space
  • Investigate common pitfalls in transitioning from mode space to real space simulations
USEFUL FOR

This discussion is beneficial for Ph.D. students, researchers, and engineers working on semiconductor devices, particularly those focusing on GNR MOSFETs and NEGF simulation techniques.

msmzarg
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Hello
I am a Ph.D. Student that my interesting issue is CNT and GNR MOSFETs.
I used NEGF simulating GNR MOSFET in mode space method. But when I tried to change my simulation method to real space I encountered a problem in calculating electron density.
Details of simulation algorithm and the problem have been shown in attached file.
Would you please guide me to solve this problem?
Sincerely
Reza
 

Attachments

Physics news on Phys.org
Are you coupling with a poisson solver? If so, how does that look?
How are you handling Vg and Bias in the MOSFETs?

Sorry, I'm not too much of an expert in NEGF...
 

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