Diagram in real space shows the dependence of band edge E[tex]_{C}[/tex] (r) or E[tex]_{V}[/tex] (r) to the position r inside the system.
This dependence is related to variation of carriers concentration with the position n(r), p(r); typical of inhomogeneous doped material (Ex: pn junction).
In this system the total current density is the sum of two term: 1) drift contribute (proportional to external electric field) and 2) diffusional contribute (proportional to the gradient of carriers concentration: "Fick's Law").
In equilibrium condition free carriers set up themselves in such a way to built up a spatial charge [tex]\rho[/tex][tex]\neq[/tex]0. This charge is due to fixed ionized doping impurities not compensated by free carriers distribution and generates an internal electric field contrasting diffusional current.
This internal field is described by a potential function related to it by E(r)=-grad[tex]\varphi[/tex](r).
If you solve Schrödinger's Equation for stationary state of one free particle with this potential term, you will obtain band structure of the inhomogeneous system.
The solution is very simple if the variations of [tex]\varphi[/tex](r) potential are observable on length higher than primitive cell dimension.
The eigenvalues are then translated by a quantity dependent of position E(r)=E(0)-e[tex]\varphi[/tex](r); where E(0) is the usual parabolic solution of Schrödinger's equation in a homogeneous system that you can display in k-space.
In a homogeneous system [tex]\varphi[/tex]=cost and E(r)=E(0) everywhere, the bands are then flat; however the bands are bent. It' s important to note that differences on energy are not affected by the translation and so the energy gap.
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Thanks.