Band diagram in real space vs reciprocal space

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Discussion Overview

The discussion revolves around the relationship between band diagrams in k-space and real space, particularly in the context of semiconductor physics and p-n junctions. Participants explore the implications of these diagrams for understanding carrier concentration and current density in inhomogeneously doped materials.

Discussion Character

  • Technical explanation
  • Conceptual clarification
  • Debate/contested

Main Points Raised

  • One participant seeks a rigorous explanation of the relationship between band diagrams in k-space and real space, particularly for p-n junctions.
  • Another participant describes how the real space diagram shows the dependence of band edges on position within the system, relating it to carrier concentration variations typical of inhomogeneously doped materials.
  • This participant explains that the total current density consists of drift and diffusion contributions, with an internal electric field arising from fixed ionized doping impurities.
  • They also mention that solving Schrödinger's Equation with a potential term leads to the band structure of the inhomogeneous system, noting that energy differences remain unaffected by translations.
  • Another participant suggests that a Fourier transform could be used to relate k-space and real space, but emphasizes that a combined view is often necessary for practical applications.
  • This participant proposes that the k-space picture can be assumed at small localized cells, provided these regions are sufficiently large for the k-space description to be valid.
  • A later reply expresses skepticism about the ease of mathematically formalizing the transition from k-space to real space, drawing an analogy to acoustics and windowed Fourier transforms.

Areas of Agreement / Disagreement

Participants generally agree on the conceptual framework of relating k-space and real space diagrams, but there is no consensus on the mathematical formalization of this relationship. Multiple competing views on the best approach remain evident.

Contextual Notes

Some participants highlight limitations in the mathematical treatment of the transition between k-space and real space, suggesting that the assumptions regarding the size of localized cells and the applicability of Fourier transforms may not be straightforward.

itler
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Hi,

can anybody rigurously explain the relationship between the band diagram in k-space (I think I understand this one) and the diagram in real space (as is often used to explain the p-n-junction).
 
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Diagram in real space shows the dependence of band edge E[tex]_{C}[/tex] (r) or E[tex]_{V}[/tex] (r) to the position r inside the system.
This dependence is related to variation of carriers concentration with the position n(r), p(r); typical of inhomogeneous doped material (Ex: pn junction).
In this system the total current density is the sum of two term: 1) drift contribute (proportional to external electric field) and 2) diffusional contribute (proportional to the gradient of carriers concentration: "Fick's Law").
In equilibrium condition free carriers set up themselves in such a way to built up a spatial charge [tex]\rho[/tex][tex]\neq[/tex]0. This charge is due to fixed ionized doping impurities not compensated by free carriers distribution and generates an internal electric field contrasting diffusional current.
This internal field is described by a potential function related to it by E(r)=-grad[tex]\varphi[/tex](r).
If you solve Schrödinger's Equation for stationary state of one free particle with this potential term, you will obtain band structure of the inhomogeneous system.
The solution is very simple if the variations of [tex]\varphi[/tex](r) potential are observable on length higher than primitive cell dimension.
The eigenvalues are then translated by a quantity dependent of position E(r)=E(0)-e[tex]\varphi[/tex](r); where E(0) is the usual parabolic solution of Schrödinger's equation in a homogeneous system that you can display in k-space.
In a homogeneous system [tex]\varphi[/tex]=cost and E(r)=E(0) everywhere, the bands are then flat; however the bands are bent. It' s important to note that differences on energy are not affected by the translation and so the energy gap.

Please correct my grammatical mistakes !

Thanks.
 
One could transform the k-space picture into x-space picture, by a Fourier transform, but to my understanding one uses a combined view for the actual picture.
Basically one assumes the k-space picture at individual small localised cells, but these regions have to be large enough for k-space description to make sense (band diagrams are used for homogeneuos space only)
A more simplyfied approach is to take the lowest free energy positions in the band picture and say that dispersion E(k) corresponds to spaces for free particles with momentum k.
That's sort of the cell view described above.
 
Yes, your interpretation - assuming k-space picture at small cells - is what I expected. But I think it is not easy to put this into a consistent mathematical form? I tried to interpred it along the same way as you do in accoustics when going from Fourier transform to "windowed Fourier transform". This also goes from a "fourier domain" to kind of a "fourier picture attached to each point of time". But I didn´t succeed in adapting this procedure to the band diagrams.
 

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